Jumaat, 24 April 2009

Yeah, got super power RF transistor




Believe or not...USD146.46 per pieces RF power transistor giving as a sample for free. 2 pieces 600W and 300W respectively.

Features

  • Typical DVBT OFDM Performance: VDD = 50 Volts, IDQ = 2600 mA, Pout = 125 Watts Avg., f = 225 MHz, Channel Bandwidth = 7.61 MHz, Input Signal PAR = 9.3 dB @ 0.01% Probability on CCDF.
    Power Gain: 25 dB
    Drain Efficiency: 28.5%
    ACPR @ 4 MHz Offset: –61 dBc @ 4 kHz Bandwidth
  • Typical Pulsed Performance: VDD = 50 Volts, IDQ = 2600 mA, Pout = 600 Watts Peak, f = 225 MHz, Pulse Width = 100 ┬Ásec, Duty Cycle = 20%
    Power Gain: 25.3 dB
    Drain Efficiency: 59%
  • Capable of Handling 10:1 VSWR, @ 50 Vdc, 225 MHz, 600 Watts Peak Power, Pulse Width = 100 ┬Ásec, Duty Cycle = 20%
  • Integrated ESD Protection
  • Excellent Thermal Stability
  • Designed for Push-Pull Operation
  • Greater Negative Gate-Source Voltage Range for Improved Class C Operation
  • RoHS Compliant
  • In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.

0 ulasan: